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Principal Design Engineer

Qorvo
July 02, 2026
Full-time
On-site
San Jose, California, United States
$170,300 - $221,500 USD yearly
VLSI Design Jobs, Level - Senior

Job Title

Principal Design Engineer

Role Summary

Experienced RF power amplifier (PA) design engineer responsible for feasibility studies, design, simulation, and layout of GaAs PA ICs and their laminate/IPD matching networks for cellular and Wi‑Fi applications (700 MHz–7 GHz). Part of an advanced development team that performs bench tuning, test, data analysis, and cross‑functional integration to meet power, bandwidth, efficiency, and linearity targets.

Experience Level

Senior / Professional. The posting expects senior experience (guidance: typically 8+ years of related technical experience).

Responsibilities

The role focuses on PA design from concept through validation and cross‑functional delivery.

  • Perform feasibility studies, architecture selection, and detailed design of GaAs PA ICs and matching networks.
  • Run linear and nonlinear simulations (ADS) and EM simulations (FEM, Momentum, HFSS) to meet simultaneous specs for power, bandwidth, efficiency, and linearity.
  • Produce schematic, layout, and integration-ready designs for IC and laminate/IPD components.
  • Conduct bench tuning and characterization with technicians and applications engineers; use network analyzers, probe stations, source/load‑pull systems, and signal analyzers for modulated signals.
  • Analyze data across PVT and VSWR conditions to validate designs and ensure manufacturing margin and yield.
  • Mentor junior engineers, document design choices, and publish technical reports, conference papers, and invention disclosures.
  • Interface with product and cross‑functional teams to meet schedules and customer requirements.

Requirements

Must-have technical skills and attributes.

  • Proven experience in cellular or Wi‑Fi PA design using GaAs HBT technologies.
  • Strong understanding of high‑efficiency and high‑linearity PA techniques and architectures, including load and supply modulation.
  • Solid knowledge of GaAs HBT device physics across temperature, bias, and frequency.
  • Extensive experience with ADS for linear/nonlinear simulation and EM tools such as FEM, Momentum, and/or HFSS.
  • Strong RF/microwave engineering, electromagnetics, analog circuits, and wireless communications background.
  • Hands‑on experience with RF test equipment: network analyzers, probe stations, source/load‑pull systems, and analyzers for modulated signals.
  • Data analysis skills to validate performance over PVT and VSWR conditions.
  • Strong communication, teamwork, organization, documentation skills, and attention to detail.

Nice-to-have:

  • Experience designing RFIC/MMIC and analog blocks (PAs, switches, LNAs, phase shifters, attenuators) in pHEMT, SiGe, SOI, or CMOS.
  • Familiarity with PA linearization techniques.
  • Knowledge of Cadence and AWR Microwave Office schematic capture, layout and simulation.
  • Experience with MATLAB, JMP, Spotfire, AEL or similar data analysis/programming tools.
  • Published technical authorship and invention disclosures; leadership experience (e.g., 15+ years with M.S./Ph.D. preferred).

Education Requirements

Bachelor’s degree plus 8+ years of related work experience and/or a post‑graduate degree is required. M.S. or Ph.D. preferred for more senior candidates (the posting cites 15+ years experience preferred with M.S./Ph.D.).


About the Company

Company: Qorvo

Headquarters: Greensboro, NC, US

Qorvo supplies innovative semiconductor solutions that enhance connectivity and power for a variety of applications, including consumer electronics, automotive, and healthcare. With a focus on RF and power solutions, Qorvo combines technology leadership and global manufacturing to address complex challenges in fast-growing industries. Their commitment to excellence and innovation drives them to shape the future of wireless communications.

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Date Posted: 2026-07-02