Memory Circuit Design Engineer
Design and validate memory-related analog, digital, and mixed-signal circuits for Micron's memory products. Contribute to circuit design, layout oversight, simulation, and tape-out activities within a circuit design team.
Collaborate with process, test, product, verification, and CAD teams to ensure manufacturability, performance, and timely delivery of memory generations.
Mid-level β typically 3β4 years of relevant memory circuit design experience (DDR5, LPDDR5/6, HBM3 or similar).
Primary responsibilities include circuit design, layout management, verification, and cross-functional coordination.
Must-have technical skills and experience for this role.
Nice-to-have:
Bachelor's degree in Electrical or Computer Engineering required. Master's degree in Electrical or Computer Engineering preferred. The posting specifies 3β4 years of related experience in memory design.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
