Intern - Advanced DRAM Cell & Device Technology

Job Title

Intern - Advanced DRAM Cell & Device Technology

Role Summary

As an intern on the Advanced DRAM Device & Cell Technology team at Micron's Boise R&D site, you will support experimental development and characterization of future DRAM cell and access device technologies. Work focuses on silicon experimentation, electrical and materials characterization, data analysis, and cross-disciplinary collaboration to improve device performance, reliability, and manufacturability.

Experience Level

Internship — entry-level; intended for current graduate students (master's or Ph.D.).

Responsibilities

Primary responsibilities include:

• Support evaluation of DRAM access devices, capacitors, and cell stack elements through characterization and data analysis.
• Design and implement silicon experiments; perform electrical, physical, and materials characterization and statistical analysis.
• Analyze device- and array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention, leakage, and read/write interactions.
• Collaborate with modeling, design, process integration, and manufacturing teams to interpret results and guide technology optimization.
• Apply AI-assisted and generative AI tools, where appropriate, to enhance data analysis and workflow efficiency.

Requirements

Must-have technical skills and experience:

• Solid understanding of semiconductor device physics, materials science, and characterization techniques.
• Experience with electrical characterization, device testing, and statistical analysis of experimental or simulation data.
• Familiarity with DRAM operational concepts: activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms.
• Familiarity with AI-assisted engineering or data-analysis tools.

Nice-to-have:

• Experience in DRAM or NAND device development, characterization, or technology research.
• Hands-on experience with materials characterization, thin film/interface engineering, process development, TCAD simulation, BEOL integration, or reliability analysis.
• Experience conducting independent research and communicating technical results to diverse audiences.

Education Requirements

Currently pursuing an M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering, or a related technical field; candidates must not graduate prior to September 2027.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.