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HBM IO Architecture, Principal Engineer

Micron Technology
May 08, 2026
Full-time
On-site
Seoul, KR
Semiconductor IP Jobs, Level - Senior

Job Title

HBM IO Architecture, Principal Engineer

Role Summary

Principal engineer responsible for architecture, design, optimization and verification of PHY circuits on the interface die for next-generation High Bandwidth Memory (HBM) products. The role sits in a multi-functional High-Performance Integrated Group working with design engineering, product engineering, process and package teams to deliver industry-leading HBM solutions.

Experience Level

Senior β€” requires significant hands-on experience. The posting specifies 5+ years of technical experience in IO interfaces and IO circuit design.

Responsibilities

Core responsibilities include IO architecture exploration, PHY circuit development, cross-functional collaboration, and verification/optimization to meet performance, power, cost and quality targets.

  • Explore and evaluate new IO architectures for future HBM products; perform technical feasibility analyses and make recommendations.
  • Design, develop and optimize HBM PHY circuits for the interface die; consider signal integrity, layout optimization and timing budget closure.
  • Correlate silicon measurements with simulation results to drive circuit-level design improvements.
  • Collaborate with memory, interface, product, process integration and transistor modeling teams to meet speed, power, cost and quality goals.
  • Perform circuit verification activities including layout verification and parasitic extraction; work toward IP-level verification closure.
  • Contribute to cross-group standardization, provide technical guidance and solicit mentorship from standards, CAD, modeling and verification groups.

Requirements

Required and preferred technical skills for successful performance in the role.

  • Must-have: Strong analog and digital IO circuit design and simulation experience (including single-ended Rx, buffers, IO, Tx, SerDes, equalizers, DCC, phase interpolators).
  • Must-have: Hands-on experience with FinFET device characteristics and practical circuit design using advanced process nodes.
  • Must-have: Experience with circuit verification, layout verification and parasitic extraction.
  • Must-have: Familiarity with off-chip protocols such as HBM, UCIe or other DRAM interfaces.
  • Nice-to-have: IP-level verification experience, strong RTL debugging skills, and front-end implementation experience (synthesis, STA, equivalence).
  • Nice-to-have: Scripting skills (Python, Tcl, Perl, shell, ACE) for automation and analysis.
  • Nice-to-have: Understanding of device physics, CMOS processing techniques and BSIM transistor models; past circuit debug through product engineering is a plus.
  • Excellent analytical and communication skills; ability to convey complex technical concepts in writing and verbally.

Education Requirements

Bachelor of Science in Electrical Engineering (BSEE) specified. The posting also specifies 5+ years of proven experience in IO interfaces and related circuit work. No other degrees, fields of study, certifications, or explicit "equivalent experience" language were provided.


About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.

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Date Posted: 2026-05-08