DRAM Pathfinding & Process Integration Engineer

Job Title

DRAM Pathfinding & Process Integration Engineer

Role Summary

Lead early-phase technology investigation and process integration for next-generation DRAM architectures at Micron's Albany development site. Work across lithography, etch, thin films, CMP, metrology, device engineering, suppliers, and research partners to evaluate technology options and reduce technical risk.

The role supports AI-enabled analytics to accelerate learning and informs strategic decisions about future memory technology roadmaps.

Experience Level

Mid-level - typically requires 5+ years of semiconductor industry experience in process integration, process development, device engineering, or advanced R&D.

Responsibilities

Accountable for pathfinding, integration, coordination, and transfer of novel DRAM process solutions.

• Lead investigation of DRAM technology concepts, materials, and process architectures to enable future scaling.
• Define structural, electrical, reliability, and manufacturability criteria and translate them into coordinated process solutions.
• Develop learning plans, DOE experiments, and technology evaluation approaches to speed decision-making and reduce risk.
• Coordinate process development across lithography, etch, films, CMP, metrology, and device engineering teams.
• Partner with lithography suppliers and research collaborators to evaluate High-NA EUV and advanced patterning impacts on fidelity, overlay, defects, and yield.
• Analyze electrical, metrology, reliability, defectivity, and yield data using statistical and AI-assisted methods; communicate findings and strategic recommendations to leadership.
• Support technology transfer of successful pathfinding concepts into formal development and manufacturing readiness.

Requirements

Must-have technical skills and experience; preferred skills are listed separately.

• 5+ years of semiconductor industry experience in process integration, process development, device engineering, or advanced R&D.
• Proven experience with memory technologies (DRAM, NAND, SRAM) and emerging memory architectures.
• Extensive knowledge of semiconductor device physics and process integration trade-offs.
• Experience designing and executing DOE plans and applying statistical analysis to electrical, metrology, reliability, and yield data.
• Proven ability to influence and collaborate across multidisciplinary engineering teams and external partners.
• Familiarity with AI-enabled analytics or demonstrated AI proficiency applied to engineering problems.
• Strong technical communication skills and experience documenting technical assumptions, risks, and recommendations.

Nice-to-have:

• Experience with DRAM technology innovation and advanced memory scaling challenges.
• Familiarity with EUV and High-NA EUV lithography and advanced patterning approaches.
• Experience with technology scouting, process architecture formulation, or work within semiconductor consortia or supplier partnerships.
• Experience using Python, JMP, SQL, machine learning, or other advanced analytics tools.

Education Requirements

Master's degree or equivalent practical experience in Electrical Engineering, Physics, Materials Science, Chemical Engineering, or a related technical field. Preferred: Ph.D. or equivalent experience. (The posting also accepts equivalent work experience in place of formal degrees.)

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.