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Director, Device Design & Integration Engineer

Renesas
May 06, 2026
Full-time
Remote friendly (Plano, Texas, United States)
Worldwide
Device Engineering Jobs, Level - Senior

Job Title

Director, Device Design & Integration Engineer

Role Summary

Lead device development for a new low-voltage GaN platform, coordinating across epitaxy, device design, wafer fab process, testing and qualification functions. Responsible for delivering production-ready GaN devices that meet cost, performance and reliability targets.

Experience Level

Senior (Director level). Requires significant hands-on GaN development experience; posting specifies 5+ years of GaN development experience.

Responsibilities

Accountable for technical leadership of the LV GaN device team and end-to-end device delivery.

  • Lead the low-voltage GaN device group and coordinate cross-functional teams (epitaxy, fab, test, reliability, packaging).
  • Design GaN device structures and chip layouts to meet cost, performance and reliability targets.
  • Define and generate test and qualification protocols; ensure successful product qualification.
  • Analyze on-wafer and in-package test data and provide physics-based explanations for observed behaviors.
  • Drive root-cause investigations for performance or quality issues and support corrective actions.
  • Compile technical reports for internal and external communication.

Requirements

Must-have technical skills and attributes.

  • Strong familiarity with GaN device physics, device design, wafer processing, layout and characterization.
  • Experience with data manipulation and analysis; familiarity with JMP preferred.
  • Excellent verbal and written communication skills.
  • Self-motivated, adaptable, able to work independently and in cross-functional teams.
  • Practical experience driving product qualification and failure investigations.
  • Nice-to-have: LV enhancement-mode (e-mode) experience, reliability physics and failure analysis expertise, knowledge of JEDEC and AEC-Q101 qualification standards.

Education Requirements

Master's degree or PhD in Electrical Engineering or a related field. The posting specifies 5+ years of GaN development experience in addition to the graduate degree.


About the Company

Company: Renesas

Headquarters: Hitachinaka, Japan

Renesas is a global leader in embedded semiconductor solutions, providing high-quality products across automotive, industrial, infrastructure, and IoT sectors. With over 22,000 employees in more than 30 countries, the company focuses on scalable solutions that enhance user experience and drive innovation while committed to sustainability and energy efficiency.

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Date Posted: 2026-03-19