Design Infrastructure Engineer β Standard and Custom Cell Characterization (HBM)
The Heterogeneous Integration Group (HIG) in Micron's Technology and Products Group develops High Bandwidth Memory (HBM) solutions. This role builds and scales characterization infrastructure and generated IP used by multiple HBM memory and logic designs.
You will work across circuit design, EDA infrastructure, and silicon validation readiness to deliver robust, automated characterization flows that improve timing closure, power modeling, and product quality for next-generation HBM programs.
Mid-level. No explicit years of experience listed; role expects demonstrated hands-on experience with cell characterization and EDA infrastructure.
Primary responsibilities focus on building scalable characterization flows, integrating them with design ecosystems, and improving model quality and silicon correlation.
Must-have technical skills and tools required for immediate contribution.
Bachelor's or Master's degree in Electrical Engineering or a related field is stated as required; emphasis on fundamentals in CMOS digital and mixed-signal design, device physics, and PVT variation.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
