Advanced CMOS Device & Process Integration Engineer

Job Title

Advanced CMOS Device & Process Integration Engineer

Role Summary

Early-career engineering role supporting development and process integration of advanced CMOS devices for memory products at a fabrication site in Hiroshima. The engineer will run experiments, analyze silicon and process data, and work with cross-functional teams to establish robust device and process flows for high-volume manufacturing.

Work includes hands-on data analysis, experiment execution, transistor performance evaluation, and automation of engineering workflows; approved AI-assisted tools may be used to enhance productivity under governance rules.

Experience Level

Entry-level / Early-career. Intended for engineers at the start of their careers (typically 0–3 years of professional experience).

Responsibilities

Key responsibilities include execution of silicon experiments, data analysis, and supporting process and device improvement activities.

• Develop and optimize advanced CMOS devices and process integration flows under guidance.
• Plan and execute engineering experiments; collect and validate silicon and test data.
• Analyze device and process data to identify trends, correlations, and improvement opportunities.
• Support efforts to improve transistor performance, process margin, reliability, yield, and manufacturing cost.
• Assist transistor model validation and investigate discrepancies between silicon, simulation, and models.
• Define and evaluate electrical test structures, parametric tests, process monitoring, and qualification items.
• Document experimental results and communicate technical findings in reports and presentations.
• Develop scripts, dashboards, and automated workflows for engineering data analysis.
• Use approved AI-assisted tools responsibly for analysis, coding, documentation, and experiment planning while following AI governance.
• Collaborate with local and global cross-functional teams and follow data security and IP requirements.

Requirements

Must-have technical skills and professional behaviors for the role; preferred items are listed separately.

• Basic understanding of semiconductor devices and standard CMOS transistor operation.
• Fundamental knowledge of MOSFET device physics (threshold voltage, drive current, leakage, short-channel effects, capacitance).
• Basic understanding of semiconductor fabrication processes.
• Strong problem-solving skills and a willingness to learn new technologies.
• Effective written and verbal communication skills.
• Ability to work collaboratively in multidisciplinary and multicultural teams.

Nice-to-have:

• Internship, research, or project experience related to CMOS devices, DRAM, logic devices, processing, or electrical characterization.
• Experience with experimental design, statistical data analysis, or semiconductor parametric testing.
• Familiarity with FinFET, Nanosheet, Gate-All-Around, or other advanced CMOS technologies.
• Basic programming or scripting experience; experience using AI-assisted coding/analytics tools responsibly.
• Experience presenting technical results to engineering teams; exposure to transistor modeling or TCAD.

Education Requirements

BS or MS in Electrical Engineering, Electronic Engineering, Semiconductor Engineering, Applied Physics, Materials Science, or a related field.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.