RF Technology Development Engineer — Principal Engineer

Job Title

RF Technology Development Engineer — Principal Engineer

Role Summary

The RF Technology Development Engineer (Principal Engineer) joins the RF Technology Development Organization to develop, optimize and qualify FEOL and BEOL semiconductor devices and processes for RF applications. The role is based in Essex Junction, VT and focuses on device design, electrical characterization, process integration and qualification to meet performance, cost and yield targets.

Works within cross-functional teams (process, failure analysis, characterization, unit process module engineers) and interacts with internal and external customers to deliver manufacturable RF technologies.

Experience Level

Senior-level (Principal Engineer). Years-of-experience guidance not specified.

Responsibilities

Primary responsibilities include device/process development, characterization, and problem solving for RF technologies.

• Develop, optimize and qualify FEOL and BEOL semiconductor devices and processes to meet performance, cost and yield requirements.
• Design, electrically characterize and analyze RF devices (FETs, bipolar, diodes, passives).
• Perform DC and RF characterization and analysis, including S-parameter, noise figure and load-pull measurements.
• Run simulations and theoretical studies to optimize device performance and benchmark against state of the art.
• Design, execute and analyze DOE experiments to assess process and device performance.
• Partner with process, failure analysis and characterization teams to improve device performance and yield; own technical process problem solving.
• Establish technology design rules, test structures and test methodologies.
• Interact with internal and external customers and respond to technical queries.
• Support Environmental, Health, Safety & Security requirements in all activities.

Requirements

Key technical and professional requirements. Education details are summarized separately below.

• Background in CMOS device physics, semiconductor processing and electrical characterization.
• Experience with DC and RF measurement techniques and analysis.
• Strong data analysis skills and ability to interpret experimental results.
• Excellent oral and written communication and interpersonal skills.
• English language fluency (written and verbal).

Nice-to-have:

• Experience in Silicon or SiGe BiCMOS FEOL or BEOL processing and semiconductor process development.
• Experience in RF device design, high-frequency measurement and analysis.
• Familiarity with Cadence or other layout and simulation tools.
• Prior internship or co-op experience, leadership experience, and project management skills.

Education Requirements

Graduating with a Master’s or PhD in Electrical Engineering, Materials Science, or another relevant engineering or physical science discipline from an accredited program. Must have at least an overall 3.0 GPA. English language fluency expected.

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.