PhD for R&D CMOS Integration

Job Title

PhD for R&D CMOS Integration

Role Summary

Carry out doctoral research on ferroelectric HfO₂-based devices (FeFET / FeCAP) and their integration into advanced CMOS technologies. Work within the Technology Architect / TD Group at the Dresden site, collaborating with internal device engineering teams and external research partners.

Primary focus: material optimization, device physics, characterization, and integration for memory and AI hardware applications.

Experience Level

Entry-level / PhD candidate. The position is intended for candidates who hold a Master’s/Diplom and are beginning doctoral research; no specific years-of-experience requirement stated.

Responsibilities

Conduct experimental and analytical research with responsibility for device development, characterization, and dissemination of results.

• Optimize HfO₂ thin films for stable ferroelectric behavior; study polarization switching, retention, endurance, and variability.
• Analyze device-level physics of ferroelectric CMOS embedded devices and in-memory computing applications.
• Develop and evaluate integration schemes for FDSOI (FDX®) and bulk CMOS technologies.
• Perform structural and electrical characterization using TEM/STEM (including advanced contrast methods such as DPC), SEM and nanoscale imaging tools.
• Carry out electrical device and basic circuit characterization and correlate electrical data with structural analysis.
• Collaborate with internal R&D, device engineering groups and external research partners; document and publish results in journals and conferences.

Requirements

Key technical skills and research capabilities required or strongly preferred.

• Must-have: Strong expertise in semiconductor materials analysis and nanostructure characterization.
• Must-have: Hands-on experience with TEM/STEM/SEM characterization; FIB preparation and analysis are beneficial.
• Must-have: Experience in data analysis using Python.
• Must-have: Background in semiconductor device physics (e.g., MOSFETs, ferroelectric devices).
• Must-have: Proven research capability demonstrated by thesis work and scientific publications or conference contributions.
• Nice-to-have: Prior exposure to HfO₂-based ferroelectric devices / FeFETs.

Education Requirements

Master’s / Diplom degree in Materials Science, Physics, Electrical Engineering, or a related discipline is required. The position is a PhD role in cooperation with a partner university (e.g., TU Dresden) leading to a doctoral degree. Research experience (thesis) and scientific publications are expected.

About the Company

Company: GlobalFoundries

Headquarters: Saratoga Springs, New York, USA

GlobalFoundries is a leading contract manufacturer for the global semiconductor industry, with facilities in multiple countries, including the USA. The company develops a broad portfolio of semiconductor technologies and employs around 13,000 people worldwide. GlobalFoundries focuses on enhancing competitiveness in specialized application solutions and fostering innovation in mobile communications, consumer electronics, and automotive applications.