NAND Custom Test Circuit Design Engineer

Job Title

NAND Custom Test Circuit Design Engineer

Role Summary

Design and validate custom test circuits for NAND flash memory at the transistor level, supporting product definition, silicon bring-up, and ramp to production. Work cross-functionally with layout, product engineering, and test teams to ensure testability, manufacturability, and reliability.

Experience Level

Mid-level — expects at least 2+ years of relevant experience in custom/analog or mixed-signal circuit design and silicon debug.

Responsibilities

Key responsibilities include design, validation, and production support of custom test circuitry for NAND memory.

• Develop and optimize transistor-level digital, analog, mixed-signal, monitoring, control, and memory-array interface test circuits.
• Define circuit functionality, interfaces, operating limits, controllability, observability, and validation criteria from product specifications.
• Create, review, and optimize schematics, device sizing, bias structures, sensing/monitoring paths, and multiplexers for test circuits.
• Analyze testability and robustness to meet coverage, manufacturability, power, area, and reliability goals.
• Validate circuits using XA (or equivalent) transistor-level simulations, Verilog, and mixed-signal validation environments; review post-layout results and drive closure.
• Collaborate with layout teams on matching, parasitics sensitivity, shielding, routing, guard rings, and layout-dependent effects.
• Support first-silicon bring-up, debug, characterization, failure isolation, and simulation-to-silicon correlation.
• Create and debug test sequences and test modes for wafer- and package-level validation.
• Use laboratory measurements and silicon data to identify root causes and recommend circuit or test improvements.
• Document test-circuit methodologies, specifications, validation results, silicon correlation, and technical recommendations.

Requirements

Must-have technical skills and experience.

• Minimum 2+ years of hands-on experience in custom/analog circuit design, mixed-signal design, memory peripheral circuit design, or product engineering with transistor-level circuit and silicon-debug exposure.
• Strong understanding of CMOS device operation, leakage mechanisms, parasitics, PVT sensitivity, timing, loading, noise margin, power, and reliability principles.
• Hands-on proficiency with circuit build entry, waveform debug, and post-layout verification.
• Proficiency with XA or equivalent fast transistor-level simulation tools, Verilog, and mixed-signal validation methodologies.
• Proficiency in Python or scripting for simulation automation, regression analysis, result extraction, and waveform processing.
• Ability to evaluate circuit risks (leakage, contention, floating nodes, device overstress, power sequencing, current density, EM/IR, long-duration stress) and recommend mitigations.
• Experience applying AI-assisted engineering workflows and developing automation or AI-enabled solutions to improve design quality and productivity.
• Nice-to-have: Solid understanding of NAND flash architecture and test modes; laboratory skills with oscilloscopes, logic/signal analyzers, source-measure equipment, and hands-on wafer/package testing.

Education Requirements

Bachelor's or Master's degree in Electrical Engineering, Electronics Engineering, Computer Engineering, or a related technical field. The posting specifies a minimum of 2+ years of relevant experience.

About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.