Internship — Low/Medium Voltage MOSFET Device Development
Join a device team developing 20–100 V class Power MOSFETs for AI server and data-center power systems. The team focuses on layout and TCAD-based device-structure design to optimize device performance and reliability.
This internship provides hands-on experience in MOSFET layout design, TCAD simulation, prototype wafer lot handling, electrical-characteristic data analysis, and result reporting while working with experienced engineers.
Entry-level (Internship). Intended for enrolled students; no specific years of professional experience required.
Primary tasks you will perform during the internship:
Must-have items and practical requirements for internship participation:
Applicants are expected to be university students in semiconductor physics, electrical/electronic engineering, semiconductor fabrication/manufacturing, or related technical fields. No specific degree level (BSc/MSc) is mandated in the posting; enrollment as a student is implied. Student insurance is required prior to starting the internship.
Company: Renesas
Headquarters: Hitachinaka, Japan
Renesas is a global leader in embedded semiconductor solutions, providing high-quality products across automotive, industrial, infrastructure, and IoT sectors. With over 22,000 employees in more than 30 countries, the company focuses on scalable solutions that enhance user experience and drive innovation while committed to sustainability and energy efficiency.
