Intern - ADV DRAM Process Integration Engineer
Micron TechnologyJob Title
Intern - ADV DRAM Process Integration Engineer
Role Summary
Join the 3D DRAM process integration team in a 300mm R&D facility to support development of next-generation DRAM memory technology. Work focuses on device performance and manufacturability, including integration and circuit issues specific to 3D DRAM.
The role requires experimental work in an R&D fab, data analysis, and cross-functional collaboration with process development, simulation, characterization, reliability, product engineering, and yield teams.
Experience Level
Entry-level (Internship). Role is for current graduate students; see Education Requirements for enrollment and graduation timing constraints.
Responsibilities
Contribute to process integration and device development for next-generation 3D DRAM.
- Develop and optimize process flows for device components such as charge storage elements and thin-film transistors.
- Design and execute experiments in the R&D fab to evaluate process changes and device behavior.
- Analyze inline, parametric, and probe data to identify operating and failure mechanisms, sources of noise and variability.
- Work with cross-functional teams (process development, product engineering, design, probe, yield) to resolve performance and yield issues.
- Summarize complex technical problems, recommend corrective actions, and support implementation.
Requirements
Must-have technical skills and attributes, plus preferred qualifications.
- Must-have: strong background in materials science and semiconductor device physics; experimental and analytical skills to design experiments and interpret electrical/material characterization data.
- Must-have: ability to collaborate across teams and communicate technical results clearly.
- Must-have: practical experience or familiarity with process integration, device characterization, and reliability concepts.
- Nice-to-have: proficiency in data analysis and modeling.
- Nice-to-have: interest in the semiconductor industry and experience with thin-film devices or charge storage elements.
Education Requirements
Currently enrolled graduate student; PhD students preferred. Preferred fields: Materials Science or Electrical Engineering; PhD in Physics or Chemical Engineering acceptable. Candidate must be a current student and must not graduate prior to September 2027. Focus or coursework in semiconductor device fabrication, electrical and material characterization is preferred.
About the Company
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
