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DRAM Memory Design Engineer — Principal (MTS/SMTS)

Micron Technology
August 17, 2026
Full-time
On-site
Boise, Idaho, United States
ASIC Design Jobs, Level - Senior

Job Title

DRAM Memory Design Engineer — Principal (MTS/SMTS)

Role Summary

Design and optimize digital and analog circuits for next-generation DRAM products, working with global design, verification, and multifunctional teams to deliver high-performance memory solutions.

Position is based onsite at Micron's Boise, ID main site (5 days onsite). Relocation support may be available.

Experience Level

Senior — Principal / Member of Technical Staff / Senior Member of Technical Staff. Typical experience guidance: MSEE path ~10+ years, BSEE path ~12+ years; SMTS candidates typically have 15+ years and demonstrated technical leadership.

Responsibilities

Key responsibilities include:

  • Design and optimize digital and analog circuits for DRAM: memory arrays, control logic, datapaths, address decoding, and I/O circuitry.
  • Lead circuit development, modeling, simulation, verification, and silicon validation to meet performance, power, area, and quality targets.
  • Drive floor-planning, layout optimization, parasitic analysis, and tape-out activities.
  • Advance AI-assisted design, automation, and design-space exploration in collaboration with internal and external partners.
  • Provide technical leadership, set technical direction, and mentor engineers across multifunctional teams.

Requirements

Must-have technical skills and experience:

  • Extensive experience in CMOS circuit design, device physics, and state machine logic.
  • Familiarity with design verification methodologies and silicon validation workflows.
  • Experience with Verilog modeling and simulation tools.
  • Experience with power delivery network (PDN) analysis.
  • Proficiency in scripting languages such as Python, Tcl, or Perl for automation and tooling.
  • Strong analytical, problem-solving, communication, and cross-functional collaboration skills.
  • Proven ability to lead complex circuit design projects and deliver to tape-out.

Nice-to-have:

  • Experience with DDR5, LPDDR5/LPDDR6, GDDR6/7, or HBM3/HBM4 memory technologies.
  • Experience with FINESIM, HSPICE, or similar schematic entry and simulation tools.
  • Exposure to AI/ML-assisted design flows, agentic AI, or advanced design automation frameworks.

Education Requirements

Minimum: Bachelor's degree in Electrical Engineering or a related field OR equivalent relevant semiconductor design experience. Preferred: Master's (MSEE) or PhD in Electrical Engineering or a related field. Posting guidance: MSEE path ~10+ years, BSEE path ~12+ years; SMTS candidates typically 15+ years. Equivalent practical experience is accepted where specified.


About the Company

Company: Micron Technology

Headquarters: Boise, Idaho, USA

Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.

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Date Posted: 2026-08-17