DRAM Memory Design Engineer — Principal (MTS/SMTS)
Design and optimize digital and analog circuits for next-generation DRAM products, working with global design, verification, and multifunctional teams to deliver high-performance memory solutions.
Position is based onsite at Micron's Boise, ID main site (5 days onsite). Relocation support may be available.
Senior — Principal / Member of Technical Staff / Senior Member of Technical Staff. Typical experience guidance: MSEE path ~10+ years, BSEE path ~12+ years; SMTS candidates typically have 15+ years and demonstrated technical leadership.
Key responsibilities include:
Must-have technical skills and experience:
Nice-to-have:
Minimum: Bachelor's degree in Electrical Engineering or a related field OR equivalent relevant semiconductor design experience. Preferred: Master's (MSEE) or PhD in Electrical Engineering or a related field. Posting guidance: MSEE path ~10+ years, BSEE path ~12+ years; SMTS candidates typically 15+ years. Equivalent practical experience is accepted where specified.
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
