Senior Engineer - Memory Cell Test Structure Design and Layout
Micron TechnologyJob Title
Senior Engineer - Memory Cell Test Structure Design and Layout
Role Summary
The Senior Engineer will support process development activities related to memory cell-based test structures. This role involves collaboration with various teams to ensure high functionality and accuracy of designs.
Experience Level
Mid-level; requires a minimum of 5 years of experience in relevant fields.
Responsibilities
Key responsibilities include:
- Engaging in process development through memory cell test structures.
- Building completed Test Element Groups (TEGs) with high confidence functionality on Silicon.
- Implementing solutions to study failure mechanisms and monitor silicon health.
- Assisting with parametric correlation and debugging design accuracy.
- Verifying and validating test structure documentation and related parameters.
Requirements
Requirements include:
- Bachelor of Science in Electrical or Microelectronic Engineering.
- 5 years of hands-on experience with EDA tools including Cadence Virtuoso and Calibre.
- Strong circuit design and layout skills including DRC, LVS, and simulation.
- Knowledge of semiconductor device physics and Design for Manufacturability.
- Good understanding of DRAM and NAND Memory Array design architectures.
- Excellent problem-solving skills and ability to work cross-culturally.
Education Requirements
Bachelor of Science in Electrical or Microelectronic Engineering is required.
About the Company
Company: Micron Technology
Headquarters: Boise, Idaho, USA
Micron Technology is a global leader in memory and storage solutions, dedicated to transforming how the world uses information. The company offers a diverse portfolio of high-performance DRAM, NAND, and NOR memory products under the Micron and Crucial brands. With a commitment to customer focus and technological innovation, Micron drives advancements in artificial intelligence, 5G, and other data-centric applications, empowering users to learn, communicate, and progress.
