Senior Principal GaN Scientist

Job Title

Senior Principal GaN Scientist

Role Summary

Lead semiconductor device technology development for GaN-based solutions, defining and driving the device roadmap from concept through release and adoption. Work across R&D, integration, modeling, reliability, and commercial teams to deliver advanced compound semiconductor devices for RF and power applications.

Provide technical leadership, hands-on experimentation, and strategic guidance to align technology development with market and business objectives.

Experience Level

Senior — professional level. Typically 5–10+ years of relevant experience in semiconductor device development.

Responsibilities

Core responsibilities include:

• Define and advance device technology roadmap for GaN and complementary compound semiconductors.
• Lead development, qualification, and release of advanced device technologies into production.
• Collaborate and influence cross-functional teams: R&D device development, integration/operations, RF modeling, circuit design, reliability, and commercial teams.
• Deliver detailed technical presentations for engineers and strategic overviews for business stakeholders.
• Perform hands-on work: write analysis software, analyze complex datasets, set up test systems, and execute device measurements.
• Apply data-driven risk assessment and decision-making throughout the technology lifecycle.
• Represent the company at conferences, committees, and industry forums; contribute to peer review and thought leadership.

Requirements

Must-have qualifications and skills:

• Deep theoretical knowledge in semiconductor physics and device engineering.
• Extensive hands-on experience developing and releasing GaN device technologies; experience with GaAs, InP, or other compound semiconductors is a plus.
• Proven ability to influence and collaborate across technical and business functions.
• Strong communication skills for technical and executive audiences.
• Practical skills in software-based analysis, test system setup, and device measurement.
• Data-driven approach to risk assessment and technical decision-making.
• Established industry presence (conference talks, committee participation, peer review) and demonstrated thought leadership.
• Position is not eligible for visa sponsorship.

Education Requirements

Minimum of a Bachelor of Science in Electrical Engineering (BSEE) and 5–10+ years of relevant work experience in semiconductor device development. The posting emphasizes semiconductor/device physics background; no other degrees, certifications, or equivalent-experience language were specified.

About the Company

Company: Qorvo

Headquarters: Greensboro, NC, US

Qorvo supplies innovative semiconductor solutions that enhance connectivity and power for a variety of applications, including consumer electronics, automotive, and healthcare. With a focus on RF and power solutions, Qorvo combines technology leadership and global manufacturing to address complex challenges in fast-growing industries. Their commitment to excellence and innovation drives them to shape the future of wireless communications.